2006. 1. 17 1/7 semiconductor technical data khb011n40p1/f1 n channel mos field effect transistor revision no : 0 general description this planar stripe mosfet has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. it is mainly suitable for electronic ballast and switching mode power supplies. features v dss(min.) = 400v, i d = 10.5a drain-source on resistance : r ds(on) =0.53 @v gs =10v qg(typ.) =32.5nc maximum rating (tc=25 ) * : drain current limited by maximum junction temperature. g d s characteristic symbol rating unit khb011n40p1 khb011n40f1 drain-source voltage v dss 400 v gate-source voltage v gss 30 v drain current @t c =25 i d 10.5 10.5* a @t c =100 6.6 6.6* pulsed (note1) i dp 42 42* single pulsed avalanche energy (note 2) e as 360 mj repetitive avalanche energy (note 1) e ar 13.5 mj peak diode recovery dv/dt (note 3) dv/dt 4.5 v/ns drain power dissipation tc=25 p d 135 44 w derate above25 1.07 0.35 w/ maximum junction temperature t j 150 storage temperature range t stg -55 150 thermal characteristics thermal resistance, junction-to-case r thjc 0.93 2.86 /w thermal resistance, case-to-sink r thcs 0.5 - /w thermal resistance, junction-to- ambient r thja 62.5 62.5 /w dim millimeters to-220ab 1.46 a b c d e f g h j k m n o 0.8 0.1 + _ 2.8 0.1 + _ 2.54 0.2 + _ 1.27 0.1 + _ 1.4 0.1 + _ 13.08 0.3 + _ 3.6 0.2 + _ + _ 9.9 0.2 + _ 9.2 0.2 + _ 4.5 0.2 + _ 2.4 0.2 15.95 max 1.3+0.1/-0.05 0.5+0.1/-0.05 3.7 1.5 a f b j g k m l l e i i o c h nn q d q p p 1. gate 2. drain 3. source 123 dim millimeters to-220is a a b b c c d d e e f f g g h h 1.47 max 13.0 max j j k k l l m mm n n o o p q q 123 1. gate 2. drain 3. source 3.18 0.1 + _ 0.8 0.1 + _ 3.3 0.1 + _ 0.5 0.1 + _ 10.16 0.2 + _ 15.87 0.2 + _ 12.57 0.2 + _ 2.54 0.2 + _ 2.54 0.2 + _ 2.76 0.2 + _ 6.68 0.2 + _ 4.7 0.2 + _ 3.23 0.1 + _ 6.5 p
2006. 1. 17 2/7 khb011n40p1/f1 revision no : 0 electrical characteristics (tc=25 ) characteristic symbol test condition min. typ. max. unit static drain-source breakdown voltage bv dss i d =250 a, v gs =0v 400 - - v breakdown voltage temperature coefficient bv dss / t j i d =250 a, referenced to 25 - 0.54 - v/ drain cut-off current i dss v ds =400v, v gs =0v, - - 10 a gate threshold voltage v th v ds =v gs , i d =250 a 2.0 - 4.0 v gate leakage current i gss v gs = 30v, v ds =0v - - 100 na drain-source on resistance r ds(on) v gs =10v, i d =5.25a - 0.5 0.53 dynamic total gate charge q g v ds =320v, i d =10.5a v gs =10v (note4,5) - 32.5 37.5 nc gate-source charge q gs - 6.4 - gate-drain charge q gd - 13 - turn-on delay time t d(on) v dd =200v r l =20 r g =25 (note4,5) - 23 45 ns turn-on rise time t r - 65 140 turn-off delay time t d(off) - 138 235 turn-off fall time t f - 81 170 input capacitance c iss v ds =25v, v gs =0v, f=1.0mhz - 1472 1913 pf reverse transfer capacitance c rss - 168 218 output capacitance c oss - 18.9 24.5 source-drain diode ratings continuous source current i s v gs 2006. 1. 17 3/7 khb011n40p1/f1 revision no : 0 gate - source voltage v gs (v) i d - v ds drain - source voltage v ds (v) drain current i d (a) 10 0 10 1 10 -1 10 -1 10 0 10 1 10 0 10 1 10 -1 68 410 2 i d - v gs r ds(on) - i d r ds(on) - t j drain current i d (a) drain current i d (a) on - resistance r ds(on) ( ? ) i s - v sd 0.2 0.4 0.8 1.0 1.2 1.6 1.4 0.6 reverse drain current i s (a) junction temperture t j ( ) 0 0 2.0 1.0 0.5 1.5 0510 35 30 25 20 15 50 -100 -50 100 150 normalized on resistance source - drain voltage v sd (v) 0.0 0.5 3.0 2.5 1.0 1.5 2.0 c 25 c 150 c v gs = 20v -55 c v gs = 10v i ds =5.25a 10 0 10 -1 10 1 bv dss - t j 0.8 1.2 1.0 0.9 1.1 -100 100 0150 -50 50 normalized breakdown voltage bv dss junction temperature tj ( ) v gs = 0v i ds = 250 a c v gs top : 15.0 v 10.0 v 8.0 v 7.0 v 6.0 v 5.5 v 5.0 v bottom: 4.5v 150 c v gs = 10v 25 c
2006. 1. 17 4/7 khb011n40p1/f1 revision no : 0 drain current i d (a) gate - charge q g (nc) c - v ds drain - source voltage v ds (v) drain - source voltage v ds (v) 0 12 10 6 2 4 8 10 30 25 5 20 15 0 q g - v gs safe operation area capacitance (pf) gate - source voltage v gs (v) 0 400 1600 2000 2800 800 1200 2400 10 -1 10 0 10 1 10 1 10 1 10 -1 10 0 10 0 10 2 10 2 10 3 frequency = 1mhz dc 10ms 10 s 1ms 100 s 100ms 0 12 10 6 2 4 8 75 150 125 50 100 25 drain current i d (a) (khb011n40p1) i d = 10.5a c junction temperature t j ( ) i d - t j v ds = 200v v ds = 80v v ds = 320v t c = 25 t j = 150 single nonrepetitive pulse c c drain current i d (a) drain - source voltage v ds (v) safe operation area 10 1 10 1 10 -2 10 -1 10 0 10 0 10 2 10 2 10 3 dc 10ms 10 s 1ms 100 s 100ms (khb011n40f1) operation in this area is limited by r ds(on) operation in this area is limited by r ds(on) t c = 25 t j = 150 single nonrepetitive pulse c c c rss c oss c iss
2006. 1. 17 5/7 khb011n40p1/f1 revision no : 0 square wave pulse duration (sec) 10 -5 10 -3 10 -2 10 -1 10 0 10 1 10 -4 10 -2 10 -1 10 0 {khb011n40p1} 0 .02 0.05 0.1 0.2 0.01 square wave pulse duration (sec) 10 -5 10 -3 10 -2 10 -1 10 0 10 1 10 -4 10 -2 10 -1 10 0 {khb011n40f1} 0.02 0. 05 0 .1 0.2 0.01 r th normalized transient thermal resistance normalized transient thermal resistance r th dut y=0 . 5 - duty factor, d= t 1 /t 2 t j(max) - t c - r thjc = p d t 1 t 2 p dm - duty factor, d= t 1 /t 2 t j(max) - t c - r thjc = p d t 1 t 2 p dm duty=0.5 sing le pulse single pulse
2006. 1. 17 6/7 khb011n40p1/f1 revision no : 0 - gate charge i d i d v ds v gs v gs v ds v ds v gs 1.0 ma 0.8 v dss 0.5 v dss fast recovery diode 10v 10 v 25 ? r l q g q gd q gs q t r t d(off) t off t d(on) t on t f t p 10% 90% - resistive load switching - single pulsed avalanche energy v ds (t) i d (t) v ds v gs 0.5 v dss 10 v 25 ? l time e as = li as 2 bv dss - v dd bv dss 1 2 v dd i as bv dss v gs
2006. 1. 17 7/7 khb011n40p1/f1 revision no : 0 - source - drain diode reverse recovery and dv /dt i f i s v ds v sd 0.8 x v dss i sd (dut) v ds (dut) v gs 10v driver dut body diode recovery dv/dt body diode forword voltage drop body diode forword current body diode reverse current di/dt v dd i rm
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